Silicon Carbide (SIC) Power Semiconductors Market Exhibit a CAGR of 10.3% From 2021–2027 – Report by The Market Reports

The global Silicon Carbide (SIC) Power Semiconductors market was valued at US$ 342.8 million in 2020 and it is expected to reach US$ 700.6 million by the end of 2027, growing at a CAGR of 10.3% during 2021-2027.

Silicon carbide, also known as carborundum, is a semiconductor containing silicon and carbon. It occurs in nature as the extremely rare mineral moissanite.

The special characteristics of SiC power devices include high-temperature operation stability, high thermal conductivity, high-energy bandgap, and faster switching time. These characteristics of SiC power devices are encouraging original equipment manufacturers (OEMs) to adopt these devices over traditional Si power devices.

Global Silicon Carbide (SIC) Power Semiconductors Market: Drivers and Restrains

The research report has incorporated the analysis of different factors that augment the market’s growth. It constitutes trends, restraints, and drivers that transform the market in either a positive or negative manner. This section also provides the scope of different segments and applications that can potentially influence the market in the future. The detailed information is based on current trends and historic milestones. This section also provides an analysis of the volume of production about the global market and about each type from 2016 to 2027. This section mentions the volume of production by region from 2016 to 2027. Pricing analysis is included in the report according to each type from the year 2016 to 2027, manufacturer from 2016 to 2021, region from 2016 to 2021, and global price from 2016 to 2027.

A thorough evaluation of the restrains included in the report portrays the contrast to drivers and gives room for strategic planning. Factors that overshadow the market growth are pivotal as they can be understood to devise different bends for getting hold of the lucrative opportunities that are present in the ever-growing market. Additionally, insights into market expert’s opinions have been taken to understand the market better.

Global Silicon Carbide (SIC) Power Semiconductors Market: Segment Analysis

The research report includes specific segments by region (country), by manufacturers, by Type and by Application. Each type provides information about the production during the forecast period of 2016 to 2027.

Key Companies profiled in this report are Infineon Technologies AG, Microchip Technology, General Electric, Power Integrations, Toshiba, Fairchild Semiconductor, STMicroelectronics, NXP Semiconductors, Tokyo Electron Limited, Renesas Electronics Corporation and more in terms of market share by sales, revenue, average pricing, product type, margins, recent developments etc.

Find more details at:

Segment by Type

  • Power Products
  • Discrete Products
  • Others

Segment by Application

  • IT and Telecom
  • Aerospace and Defense
  • Industrial
  • Energy and Power
  • Electronics
  • Automotive
  • Healthcare
  • Others

Table of Content:

1 Silicon Carbide (SIC) Power Semiconductors Market Overview

2 Silicon Carbide (SIC) Power Semiconductors Market Competition by Manufacturers

3 Silicon Carbide (SIC) Power Semiconductors Retrospective Market Scenario by Region

4 Global Silicon Carbide (SIC) Power Semiconductors Historic Market Analysis by Type

5 Global Silicon Carbide (SIC) Power Semiconductors Historic Market Analysis by Application

6 Key Companies Profiled

7 Silicon Carbide (SIC) Power Semiconductors Manufacturing Cost Analysis

8 Marketing Channel, Distributors and Customers

9 Silicon Carbide (SIC) Power Semiconductors Market Dynamics

10 Global Silicon Carbide (SIC) Power Semiconductors Market Forecast

11 Research Finding and Conclusion

12 Methodology and Data Source

13 Forecast by Type and by Application (2022-2027)

14 Research Finding and Conclusion

15 Methodology and Data Source

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